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| CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 1/4 BF422A3 Description * NPN high voltage transistors in a TO-92 plastic package. * Complementary to BF423A3. Features * Low feedback capacitance. Applications Symbol * Class-B video output stages in color television and professional monitor equipment. Outline BF422A3 TO-92 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Peak Collector Current Peak Base Current Power Dissipation; Junction Temperature Storage Temperature Operating Ambient Temperature BF422A3 Symbol VCBO VCEO VEBO IC ICM IBM Pd Tj Tstg Tamb Conditions Open emitter Open base Open collector Min Tamb25 ; Note -65 -65 Max 250 250 5 50 100 50 830 150 +150 +150 Unit V V V mA mA mA mW C C C Note : Transistor mounted on a printed-circuit board. CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE Cre fT Min. 250 250 5 50 60 Typ. Max. 10 10 50 0.6 1.6 Unit V V V nA A nA V pF MHz Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 2/4 Test Conditions IC=100A IC=1mA IE=10A IE=0, VCB=200V IE=0, VCB=200V, Tj=150 IC=0, VEB=5V IC=30mA, IB=5mA VCE=20V, IC=25mA IC=iC=0, VCE=30V, f=1MHz VCE=10V, IC=10mA, f=100MHz *Pulse Test: Pulse Width 380s, Duty Cycle2% Thermal Characteristics Symbol RthJA Parameter Thermal resistance from junction to ambient Conditions Note Value 150 Unit K/W Note : Transistor mounted on a printed-circuit board BF422A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 10000 Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE 1000 VCE(SAT) @ IC = 20IB 100 VCE = 20V VCE = 10V VCE = 5V 100 VCE(SAT) @ IC = 10IB 10 1 10 Collector Current---IC(mA) 100 10 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1000 Power Dissipation---PD(mW) Saturation Voltage---(mV) 900 800 700 600 500 400 300 200 100 0 1 10 Collector Current---IC(mA) 100 0 Power Derating Curve VBE(SAT) @ IC =10IB 100 50 100 150 200 Ambient Temperature---TA() BF422A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C234A3 Issued Date : 2004.02.27 Revised Date : 2004.07.28 Page No. : 4/4 A B 1 2 3 2 Marking: BF422 3 C D H I E F G Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-92 Plastic Package CYStek Package Code: A3 1 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I 1 2 3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2 Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BF422A3 CYStek Product Specification |
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